Determination of the Planarization Distance for Copper CMP Process

Autor:	S. Hymes, Tom Brown, M. Joffe, Tamba Tugbawa, W. Sands, Duane S. Boning, H. Yeung, Tae Park, M. Banet, John Nguyen, K. Smekalin, T. West
Rok vydání:	1999
Předmět:	Overburden Materials science chemistry business.industry Chemical-mechanical planarization Process (computing) Slurry Optoelectronics chemistry.chemical_element Profilometer business Copper Process conditions
Zdroj:	MRS Proceedings. 566
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-566-211
Popis:	A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e923dba7b2ebfd9c14b77607732e9872 https://doi.org/10.1557/proc-566-211 Zobrazit plný text záznamu Full text from SpringerLink