Heterogeneously Integrated V-Band Amplifier
Autor: | Vesna Radisic, Sujane Wang, Cedric Monier, Dennis W. Scott, E. Kaneshiro, K. K. Loi, Augusto Gutierrez-Aitken |
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Rok vydání: | 2018 |
Předmět: |
Interconnection
Materials science Electrically short business.industry Heterojunction bipolar transistor Amplifier 020206 networking & telecommunications 02 engineering and technology Power (physics) 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Connection (algebraic framework) business V band |
Zdroj: | 2018 IEEE/MTT-S International Microwave Symposium - IMS. |
Popis: | We report on heterogeneously integrated V-band amplifier realized in four layer interconnect InP heterojunction bipolar transistor (HBT). The amplifier chiplet is integrated onto a passive InP carrier wafer with two layers of interconnect using heterogeneous integrated interconnects, which enable electrically short connection between two technologies. The heterogeneously integrated interconnect or transition has measured loss of $\leq \pmb{0.1}\mathbf{dB}$ up to 30 GHz and ~0.4 dB at 90 GHz. Measured amplifier S-Parameters show almost no difference between before and after integration versions. Relatively flat output power between 11.5 and 12.5 dBm was demonstrated from 55 to 65 GHz. This is the first reported integration of V-band amplifier chiplets using heterogeneous integration, as well as lowest reported loss for heterogeneous interconnect transition. |
Databáze: | OpenAIRE |
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