415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process

Autor:	Vibhor Jain, John Pekarik, Crystal Kenney, Judson Holt, Chris Durcan, Jeffrey B. Johnson, Sudesh Saroop, Mona Nafari, Vaibhav Ruparelia, Santosh Kumar Gedela, Prateek Kumar Sharma, Viorel Ontalus, Shweta Khokale, Saloni Chaurasia, Venkata Vanukuru, Alvin Joseph
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e900bacd47b5bbc82eb3954edf4ae348 https://doi.org/10.1109/iedm45625.2022.10019417 Zobrazit plný text záznamu