Spark plasma sintering of dielectric BaTaO2N close to the melting point of the BaCN2 additive
| Autor: | Michiaki Iha, Mikio Higuchi, Shinichi Kikkawa, Masashi Inoguchi, Koji Murayama, Akira Hosono, Yuji Masubuchi |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Sintering chemistry.chemical_element Spark plasma sintering 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Nitrogen chemistry visual_art 0103 physical sciences Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Melting point Relative density Ceramic Composite material 0210 nano-technology |
| Zdroj: | Journal of the European Ceramic Society. 40:2317-2322 |
| ISSN: | 0955-2219 |
| DOI: | 10.1016/j.jeurceramsoc.2020.02.008 |
| Popis: | The perovskite-type oxynitride BaTaO2N is a promising lead-free relaxor ferroelectric material. However, this material releases a part of its nitrogen during its sintering above 1350 °C. Subsequent annealing of the resulting sintered BaTaO2N0.85 ceramics under an ammonia flow is necessary to recover an insulating, stoichiometric BaTaO2N ceramics. Very recently, molten BaCN2 was reported to be a useful flux for the preparation of BaTaO2N microcrystals without the loss of nitrogen. In the present work, BaTaO2N powder was sintered with a BaCN2 additive under mechanical pressure, using a spark plasma sintering system. Nitrogen loss from the BaTaO2N ceramic was avoided during liquid phase sintering at approximately 900 °C. The stoichiometric BaTaO2N ceramic product with a relative density of 79.8 % was an electrically insulator and it showed its relative dielectric constants, er, in the range from 320 to 650 and a loss tanδ values from 0.04 to 0.19 at room temperature. |
| Databáze: | OpenAIRE |
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