A 1.5–45-GHz High-Power 2-D Distributed Voltage-Controlled Attenuator
| Autor: | Binh L. Pham, Anh-Vu Pham, Duy P. Nguyen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Attenuator (electronics)
Engineering Radiation business.industry Dynamic range 020208 electrical & electronic engineering Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Condensed Matter Physics law.invention Gallium arsenide chemistry.chemical_compound chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Insertion loss Field-effect transistor Electrical and Electronic Engineering business High dynamic range Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 65:4208-4217 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2017.2706692 |
| Popis: | We present the development of an ultra-wideband and 1-W voltage-controlled attenuator (VCA) using a 0.15- $\mu \text{m}$ enhancement mode gallium arsenide pseudomorphic high-electron mobility transistor technology. For the first time, a 2-D stacked field-effect transistor configuration is employed in a distributed VCA to simultaneously achieve wide bandwidth, high power, high dynamic range, and low insertion loss. The systematic design methodology is proposed, and a VCA prototype is fabricated and measured for verification. The monolithic microwave integrated circuit (MMIC) VCA exhibits a measured insertion loss of 1.9–5.5 dB from 1.5–45 GHz. The measured highest input 1-dB power compression point ( $P_{\mathrm {1dB}}$ ) is 30 dBm with a dynamic range of 26 dB. To the best of the authors’ knowledge, this paper reports the highest bandwidth and $P_{\mathrm {1dB}}$ of a single MMIC VCA while still maintaining excellent performance regarding dynamic range, insertion loss, and chip size. |
| Databáze: | OpenAIRE |
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