Thin Film Solar Cells Based on n-type Polycrystalline CdTe Absorber
| Autor: | Yong-Hang Zhang, Sudhajit Misra, Vasilios Palekis, Don L. Morel, Shamara Collins, Chris Ferekides, Michael A. Scarpulla, Chih An Hsu, Imran Khan |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Zinc telluride Doping Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Cadmium telluride photovoltaics chemistry.chemical_compound chemistry 0103 physical sciences Thin film solar cell Crystallite Thin film 010306 general physics 0210 nano-technology Deposition (law) Indium |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8548249 |
| Popis: | The effect of Indium (In) doping on CdTe thin film solar cells was investigated. CdTe thin films were deposited using the elemental vapor transport (EVT) technique under various Cd/Te gas phase ratios and In vapor concentrations. TCO/Buffer/n-CdTe/p-ZnTe solar cells have been fabricated and characterized. Indium doping has been found to affect the device performance. Capacitance-voltage (C-V) measurements revealed that net n-type doping increased with In concentration during the EVT deposition. Spectral response (SR) measurements indicated an enhanced carrier collection at higher In concentrations. The open-circuit voltage ($\text{V}_{\mathbf {OC}}$) and fill factor (FF) of the devices was found to increase with increased n-type doping and therefore builtin voltage. To-date n-type CdTe solar cells yielded devices with $\text{V}_{\mathbf {OC}} \quad =$ 730 mV, $\text{J}_{\mathbf {SC}} \quad =$ 20 mA/cm$^{\mathbf {2}} {, \mathbf {FF}} =$textbf 62 % and efficiency near 9 %. |
| Databáze: | OpenAIRE |
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