Design of 1.2 kV SiC Trench MOSFET for suppression on Electric Field Crowding at Gate Oxide
| Autor: | Yeongeun Park, Chaeyun Kim, Hyowon Yoon, Gyuhyeok Kang, Gwangjae Kim, Ogyun Seok |
|---|---|
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | The transactions of The Korean Institute of Electrical Engineers. 71:1646-1650 |
| ISSN: | 2287-4364 1975-8359 |
| DOI: | 10.5370/kiee.2022.71.11.1646 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|