The effect of hydrogen- and oxygen-plasma treatments on dielectric properties of amorphous carbon nitride films
| Autor: | Yohko Naruse, Shoji Nitta, Masami Aono, T. Katsuno |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Hydrogen Mechanical Engineering Analytical chemistry Electrical breakdown chemistry.chemical_element General Chemistry Dielectric Nitride Electronic Optical and Magnetic Materials Amorphous solid Carbon film Amorphous carbon chemistry Sputtering Materials Chemistry Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 10:1147-1151 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(00)00376-9 |
| Popis: | Amorphous carbon nitride (a-CN x ) films made by a reactive sputtering of a carbon target with nitrogen plasma shows high resistivity and high electrical breakdown field. Therefore, a-CN x is a good material as a dielectric material. In this paper, the effects of hydrogen-plasma and oxygen-plasma treatment to the dielectric properties of a-CN x films were studied, discussed and compared. A cyclic process of the deposition of a thin a-CN x film and hydrogen- and oxygen-plasma treatment, which is called the layer-by-layer process (LL), were used to make LLa-CN x and LLa-CN x O y films, respectively. Comparing the results of capacitance made of a-CN x , LLa-CN x , and LLa-CN x O y the most effective treatment to get smaller dielectric constant materials at present was to use hydrogen plasma treatment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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