Integration of fine-pitched Through-Silicon Vias and Integrated Passive Devices

Autor:	Dzafir Shariff, Aung Kyaw Oo, Lily Asoy, Keith Buchanan, Chia Lai Yee, Steve Burgess, Pandi C. Marimuthu, Kath Crook, Tony Wilby, Ken Hsiao
Rok vydání:	2011
Předmět:	Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Three-dimensional integrated circuit Temperature cycling Resonator chemistry Soldering Interposer Optoelectronics Wafer Integrated circuit packaging business
Zdroj:	2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
Popis:	This paper reports on a silicon interposer containing both Through-Silicon Vias [TSV] and Integrated Passive Devices [IPD]. The fine-pitched 30μm diameter × 100μm deep TSV connect the IPD on one side of the wafer with Re-Distribution Layer [RDL] metallization and solder bumps on the other. Such a platform provides great versatility for heterogeneous system integration and reduced form-factor packaging. Interposer manufacture is described and performance of integrated RF filters and resonators is assessed after reliability testing, including; high temperature stress, thermal cycling and accelerated stress test.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8f122befd141cdd561576eed9c7044c https://doi.org/10.1109/ectc.2011.5898609 Zobrazit plný text záznamu