High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Autor:	F. J. Ciuba, Russell D. Dupuis, J. G. Neff, K. G. Fertitta, Archie L. Holmes
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Optical measurements Chemical vapor deposition Combustion chemical vapor deposition Nitride Rocking curve Crystallography Quality (physics) X-ray crystallography Sapphire Optoelectronics business
Zdroj:	Applied Physics Letters. 65:1823-1825
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112855
Popis:	We report the growth of high‐quality GaN heteroepitaxial films on (0001) sapphire substrates by low‐pressure metalorganic chemical vapor deposition. These films have exhibited narrow x‐ray‐diffraction rocking curves with full‐width‐at‐half‐maximum values as low as ΔΘ∼38 arc sec. These are the narrowest x‐ray‐diffraction rocking curve linewidths reported to date for any III‐V nitride film. Electrical and optical measurements further indicate the samples to be of high quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee8f9c295f84c44d9166126bece3a4 https://doi.org/10.1063/1.112855 Zobrazit plný text záznamu