Half pitch 14 nm direct pattering with Nanoimprint lithography
| Autor: | Yong-Taik Kim, Hirokazu Kato, S. Inoue, Motofumi Komori, Hirotaka Tsuda, Kei Kobayashi, A. Mitra, K. Matasunaga, Hiroshi Tokue, Sachiko Kobayashi, Masanobu Saito, Tetsuro Nakasugi, T. Imamura, Wooyung Jung, Takeharu Motokawa, Tatsuhiko Higashiki, T. Komukai, Kazuya Fukuhara, J. Cho, Masamitsu Itoh, Masayuki Hatano, K. Takahata, Shingo Kanamitsu, Takuya Kono, Kohji Hashimoto |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 02 engineering and technology Overlay 021001 nanoscience & nanotechnology 01 natural sciences Nanoimprint lithography law.invention 010309 optics Resist law 0103 physical sciences Multiple patterning Multi field Optoelectronics Wafer 0210 nano-technology business Throughput (business) |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM). |
| Popis: | We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ( $3\sigma$ ) and the template life around 125 lots. Throughput of 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) and multi field dispense (MFD). The hp 14 nm template was fabricated by a self-aligned double patterning (SADP) on a template. Using this template, we fabricated hp 14 nm dense Si lines with a depth of 50 nm on a 300 mm wafer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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