Broadened waveguide laser structures at 780 nm
| Autor: | Jerome K. Butler, Gary A. Evans, Jin Huang, Linglin Jiang, Preston Young, Daniel J. Smith, Mark Schuckert, Duy Phan |
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| Rok vydání: | 2017 |
| Předmět: |
Catastrophic optical damage
Materials science business.industry Single-mode optical fiber 02 engineering and technology Cladding (fiber optics) Laser Gallium arsenide law.invention chemistry.chemical_compound 020210 optoelectronics & photonics chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics business Current density Quantum well Beam divergence |
| Zdroj: | High-Power Diode Laser Technology XV. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2255065 |
| Popis: | Two AlGaAs/GaAs broadened waveguide laser structures, one asymmetric, one nearly symmetric, were designed for high power at about 780 nm. The design concept is based on low losses and higher gain for the fundamental mode with higher losses and lower gain for higher-order modes. To achieve these results, the positions of the quantum wells, thicknesses of the cladding layers, doping profiles, and the compositions of all the layers are carefully chosen. The structures are designed to have a loss of about 0.5/cm for the TE0 mode and more than 5 /cm for higher order modes for both structures. The asymmetric structure has a lower threshold current density (~750 A/cm2) and a higher slope (about 0.9 W/A) of the light-current curve compared to the symmetric structure. Increased L-I slope for the asymmetric structure results mainly from increased hole injection efficiency because the quantum wells are close to the p-side. Ridge-guide lasers fabricated with the asymmetric structure produced greater than 350 mW at 25°C. The beam divergence of the asymmetric structure was 6° × 14°. |
| Databáze: | OpenAIRE |
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