Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps
| Autor: | Marvin H. White, R.E. Paulsen |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Computer simulation Silicon business.industry Oxide Analytical chemistry chemistry.chemical_element Electronic Optical and Magnetic Materials Non-volatile memory Tunnel effect chemistry.chemical_compound chemistry MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Quantum tunnelling |
| Zdroj: | IEEE Transactions on Electron Devices. 41:1213-1216 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.293349 |
| Popis: | A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO/sub 2/ interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET's as well as SONOS nonvolatile memory devices is presented. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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