Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD

Autor:	Xu An Pei, Yong Liang Tan, Zhen Guo Song, Ti Ning, Jin Ma, Feng Ji
Rok vydání:	2009
Předmět:	chemistry.chemical_compound Materials science X-ray photoelectron spectroscopy chemistry General Engineering Analytical chemistry Sapphire Oxide Atomic ratio Nanotechnology Metalorganic vapour phase epitaxy High-resolution transmission electron microscopy Tin oxide
Zdroj:	Advanced Materials Research. :759-762
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.79-82.759
Popis:	1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8d293dfb4fcb58da770538b09782a51 https://doi.org/10.4028/www.scientific.net/amr.79-82.759 Zobrazit plný text záznamu