Micro-raman study of the damage in nanopatterned GaAs(001)
| Autor: | J. D. Busbee, L. Grazulis, K. G. Eyink, Jason C. Reber |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
chemistry.chemical_classification
Nanostructure Phonon business.industry Annealing (metallurgy) Diamond engineering.material Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials symbols.namesake Optics chemistry Materials Chemistry engineering symbols Optoelectronics Wafer Electrical and Electronic Engineering business Raman spectroscopy Inorganic compound |
| Zdroj: | Journal of Electronic Materials. 31:1112-1116 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-002-0050-6 |
| Popis: | A single-point diamond machine fabricated patterns with a series of equispaced lines in an area of nominally 10 µm × 10 µm. On a single GaAs wafer, patterns having 80, 100, 120, and 140 lines were machined. Sample patterns were formed with 5-mg and 7-mg loads. Atomic force microscopy (AFM) characterized the surface morphology and depth of cut of these patterns as a function of load and indicated a consistent depth of cut for a given load. Subsurface damage in these layers was compared using the ratio of the TO to the LO phonon peak intensities in the µ-Raman spectra with and without annealing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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