Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
| Autor: | S. B. Aleksandrov, M. V. Stepanov, Yu. V. Pogorel’skiĭ, M. Yu. Pogorel’skiĭ, L. É. Velikovskiĭ, I. É. Velikovskiĭ, S. I. Petrov, A. P. Shkurko, M. A. Sokolov, A. É. Byrnaz, D. M. Krasovitskiĭ, M. V. Pavlenko, A. V. Veretekha, A. N. Alekseev, V. P. Chalyĭ, A. G. Tkachenko, I. A. Sokolov |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Electron mobility
Electron density Materials science Physics and Astronomy (miscellaneous) business.industry Transconductance Transistor Heterojunction Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science law Optoelectronics Breakdown voltage business Quantum well |
| Zdroj: | Technical Physics Letters. 32:960-963 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785006110162 |
| Popis: | High-power field-effect transistors (FETs) are among the main applications of heterostructures based on group III metal nitrides, which in most cases implement the classical GaN/AlGaN structure with a single junction. An alternative approach based on the use of double heterostructures with imporved two-dimensional electron gas (2DEG) confinement offers a number of advantages, but such structures are usually characterized by a lower carrier mobility and density (in GaN layers of reduced thickness) as compared to the values in the single-junction structures. Optimization of the heterostructure design and ammonia MBE growth conditions allowed us to obtain multilayer AlN/AlGaN/GaN/AlGaN heterostructures with quantum wells, which are characterized by a 2DEG carrier mobility of 1100–1300 cm2/(V s) and a sheet electron density of (1.1–1.3) × 1013 cm-2. Experimental FETs based on the obtained multilayer heterostructures in a static regime exhibit working current densities up to 0.6 A/mm at a transconductance of up to 150 mS/mm and a breakdown voltage above 100 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|