SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures
| Autor: | Shulin Gu, Yi Shi, Ning Jiang, Rong Zhang, Xunming Zhu, Youdou Zheng |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Inorganic chemistry Alloy technology industry and agriculture General Physics and Astronomy Heterojunction Surfaces and Interfaces General Chemistry Substrate (electronics) Chemical vapor deposition engineering.material equipment and supplies Condensed Matter Physics Surfaces Coatings and Films Thermal engineering Deposition (phase transition) Optoelectronics Growth rate business |
| Zdroj: | Applied Surface Science. 115:28-30 |
| ISSN: | 0169-4332 |
| Popis: | The deposition of GeSi alloys on Ge substrate by Rapid Thermal Process, Very Low Pressure CVD method has been studied. The growth rate of the GeSi alloy increases as the Si atoms are incorporated into the GeSi alloy at a proper temperature. The high substrate temperature will cause the Si fraction and the GeSi growth rate to increase. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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