Edge Termination Structures for 3.3 kV 4H-SiC Devices
| Autor: | Chen-Dong Tzou, Bi-Fan Dong, Chih-Chao Hsu, Yi-Ting Chen, Yun-Kai Lai, Kung-Yen Lee |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology Edge (geometry) 021001 nanoscience & nanotechnology 01 natural sciences Power (physics) Electric field 0103 physical sciences Breakdown voltage Optoelectronics Power semiconductor device 0210 nano-technology business Sensitivity (electronics) Photonic crystal |
| Zdroj: | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). |
| DOI: | 10.1109/wipdaasia49671.2020.9360283 |
| Popis: | In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition. |
| Databáze: | OpenAIRE |
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