| Autor: |
Jia-biao Zheng, Wencheng Wang, Xiaoyuan Hou, Xun Wang, Jian Wang, Xi-guang Zheng, He-zhou Wang, Fulong Zhang |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Solid State Communications. 91:239-243 |
| ISSN: |
0038-1098 |
| Popis: |
Photoluminescence mechanism and carrier dynamics for visible-light-emitting porous silicon are investigated with the use of temperature-dependent (77–400 K) and picosecond time-resolved luminescence spectroscopy. The results from porous silicon samples prepared by different post-anodic treatment methods are compared. Two excitation states with large distinct lifetimes are responsible for the visible light emission, where the higher energy state with a mono-exponential lifetime about 1 ns is revealed for the first time, which dominates the luminescence spectrum for low temperatures. At high temperatures a thermally assisted carrier transfer process occurs and a long lifetime (∼ μs) lower energy state dominates the luminescence spectrum. A possible explanation by taking both the quantum confinement effect and the surface-state mechanism as its basic framework is thus proposed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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