Effect of Si lattice strain on the reliability characteristics of ultrathin SiO2 on a 4° tilted wafer

Autor:	Kyung-youl Min, Dae Won Moon, Hyo Sik Chang, Sangmu Choi, Hyunsang Hwang, Hyung-Ik Lee, Hyundoek Yang
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Gate dielectric Silicon on insulator law.invention Capacitor Reliability (semiconductor) law Gate oxide Stress relaxation Optoelectronics Wafer business Metal gate
Zdroj:	Applied Physics Letters. 80:386-388
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1435404
Popis:	The electrical and structural characteristics of an ultrathin gate dielectric, thermally grown on 4° tilted wafer has been investigated. Compared with a control wafer, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed for the 4° tilted wafer, which was confirmed by medium energy ion scattering spectroscopy. A significant improvement in the reliability characteristics of a metal–oxide–semiconductor (MOS) capacitor, with a 2.5-nm-thick gate oxide, grown on a tilt wafer was observed. This improvement in reliability can be explained by the relaxation of strain at the SiO2/Si interface. An ultrathin gate dielectric grown on a tilt wafer represents a promising alternative for gate dielectric applications in future MOS devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8a68215afba8f51b6029dba98a463a0 https://doi.org/10.1063/1.1435404 Zobrazit plný text záznamu