Improvement on synaptic properties of WO x -based memristor by doping Ti into WO x
Autor: | Wenqi Lu, Huolin Huang, Chuanhui Cheng, Yanhong Liu, Kun Liu, Yusheng Wang, Chunxia Wang |
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Rok vydání: | 2021 |
Předmět: |
Materials science
Acoustics and Ultrasonics business.industry Precipitation (chemistry) Doping Alloy Conductance Memristor engineering.material Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Octahedron law Sputtering Phase (matter) engineering Optoelectronics business |
Zdroj: | Journal of Physics D: Applied Physics. 54:455107 |
ISSN: | 1361-6463 0022-3727 |
Popis: | Doping Ti into WOx are widely used to improve the performances of various WOx-based devices. However, Ti-doped WOx (Ti:WOx) based memristors have not been investigated deeply, especially about their synaptic properties. In this report, Ti:WOx films are deposited by sputtering WTi alloy target in Ar + O2 atmosphere, in which the substrates were not heated, avoiding the precipitation of TiO2 phase. As-grown Ti:WOx films exhibit polymorphous crystallized structures, originated from the topological deformation of WO6 octahedron with replacing W by Ti. Furthermore, the memristor with the structure of W/Ti:WOx/ITO demonstrates typical synaptic properties, including the controllable synapse weight update by adjusting the input pulse amplitude, interval, as well as the transformation from the paired-pulse facilitation (PPF) to the paired-pulse depression (PPD). Moreover, the higher Ti-O band energy leads to the smaller hysteresis loop areas of its I-V curves, which may mean the better synaptic performance, such as higher resolution. Additionally, contrary to the other metal-oxide based memristor, our device' conductance increases by applying the positive voltage scans or a series of positive pulses on the metal electrode. Otherwise, it will decrease. With I-V fitting and the energy-band diagrams, we analyzed deeply carrier transport processes, revealing the unique synaptic mechanism. |
Databáze: | OpenAIRE |
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