Improvement on synaptic properties of WO x -based memristor by doping Ti into WO x

Autor: Wenqi Lu, Huolin Huang, Chuanhui Cheng, Yanhong Liu, Kun Liu, Yusheng Wang, Chunxia Wang
Rok vydání: 2021
Předmět:
Zdroj: Journal of Physics D: Applied Physics. 54:455107
ISSN: 1361-6463
0022-3727
Popis: Doping Ti into WOx are widely used to improve the performances of various WOx-based devices. However, Ti-doped WOx (Ti:WOx) based memristors have not been investigated deeply, especially about their synaptic properties. In this report, Ti:WOx films are deposited by sputtering WTi alloy target in Ar + O2 atmosphere, in which the substrates were not heated, avoiding the precipitation of TiO2 phase. As-grown Ti:WOx films exhibit polymorphous crystallized structures, originated from the topological deformation of WO6 octahedron with replacing W by Ti. Furthermore, the memristor with the structure of W/Ti:WOx/ITO demonstrates typical synaptic properties, including the controllable synapse weight update by adjusting the input pulse amplitude, interval, as well as the transformation from the paired-pulse facilitation (PPF) to the paired-pulse depression (PPD). Moreover, the higher Ti-O band energy leads to the smaller hysteresis loop areas of its I-V curves, which may mean the better synaptic performance, such as higher resolution. Additionally, contrary to the other metal-oxide based memristor, our device' conductance increases by applying the positive voltage scans or a series of positive pulses on the metal electrode. Otherwise, it will decrease. With I-V fitting and the energy-band diagrams, we analyzed deeply carrier transport processes, revealing the unique synaptic mechanism.
Databáze: OpenAIRE