PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor
| Autor: | Kwang Hong Lee, Yiding Lin, Chuan Seng Tan, Govindo J. Syaranamual, Lionel C. Kimerling, Danhao Ma, Rui-Tao Wen, Jurgen Michel |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Band gap business.industry chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention 010309 optics chemistry.chemical_compound Responsivity Semiconductor Strain engineering Silicon nitride chemistry law 0103 physical sciences Optoelectronics Photonics 0210 nano-technology business |
| Zdroj: | Photonics Research. 9:1255 |
| ISSN: | 2327-9125 |
| DOI: | 10.1364/prj.419776 |
| Popis: | Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of a material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein, we adopted a straightforward recess-type design of a silicon nitride ( SiN x ) stressor to achieve a uniform strain with enhanced magnitude in the material of interest on PICs. Normal-incidence, uniformly 0.56% tensile strained germanium (Ge)-on-insulator (GOI) metal-semiconductor-metal photodiodes were demonstrated, using the recessed stressor with 750 MPa tensile stress. The device exhibits a responsivity of 1.84 ± 0.15 A / W at 1550 nm. The extracted Ge absorption coefficient is enhanced by ∼ 3.2 × to 8340 cm − 1 at 1612 nm and is superior to that of In 0.53 Ga 0.47 As up to 1630 nm limited by the measurement spectrum. Compared with the nonrecess strained device, additional absorption coefficient improvement of 10%–20% in the C -band and 40%–60% in the L -band was observed. This work facilitates the recess-strained GOI photodiodes for free-space PIC applications and paves the way for various (e.g., Ge, GeSn or III-V based) uniformly strained photonic devices on PICs. |
| Databáze: | OpenAIRE |
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