Nonvolatile Crossbar Switch Using $\hbox{TiO}_{x}/ \hbox{TaSiO}_{y}$ Solid Electrolyte

Autor:	Masakazu Aono, Munehiro Tada, Toshitsugu Sakamoto, Naoki Banno, Hiromitsu Hada, Naoki Kasai
Rok vydání:	2010
Předmět:	Materials science business.industry Transistor Electrical engineering Electrolyte Integrated circuit Electronic Optical and Magnetic Materials law.invention Non-volatile memory Nanoelectronics CMOS law Optoelectronics Electrical and Electronic Engineering Crossbar switch business Low voltage
Zdroj:	IEEE Transactions on Electron Devices. 57:1987-1995
ISSN:	1557-9646 0018-9383
Popis:	A nonvolatile crossbar switch using a dual-layered TiOx/TaSiOy solid electrolyte, "NanoBridge," has been developed. NanoBridge is scalable to 50 nm and programmed at low voltage while keeping a low ON-resistance. The high compatibility with a back-end-of-line processing for CMOS integrated circuits is achieved by using the dual-layered TiOx/TaSiOy solid electrolyte, in which a barrier (Ti) is inserted on Cu and changes to an oxide during the subsequent process step. TiOx has the double role of preventing Cu oxidation during TaSiOy deposition and acting as a solid electrolyte itself. A resistive-change characteristic is investigated in terms of the inserted barrier dependence. At an optimal barrier insertion, the integrated switch shows bipolar switching characteristics with a high OFF-/ON-resistance ratio of 106. The developed device is applied to a 4 × 4 crossbar switch integrated with the CMOS circuit. The crossbar switch is configured without select transistors and transfers signals properly.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e89057fc20413f10783f4bdeddf9e934 https://doi.org/10.1109/ted.2010.2051191 Zobrazit plný text záznamu