P-Type µc-Si:H Based Hole Selective Fired Passivating Contacts (FPC) without Hydrogenation After Firing
| Autor: | Desthieux, A., Bazer-Bachi, B., Goaer, G., Drahi, E., Posada, J., Roca I Cabarrocas, P. |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20202020-2dv.3.27 |
| Popis: | 37th European Photovoltaic Solar Energy Conference and Exhibition; 532-535 The Fired Passivated Contact (FPC) structure allows the integration of passivating contacts with a low thermal budget by removing the high temperature crystallisation step usually used for standard TOPCon fabrication. However, these structures usually necessitate a post-firing hydrogenation in order to maintain high passivation quality. In this study, we demonstrate the feasibility of FPC process without hydrogenation after firing. We focus on the integration of boron-doped hydrogenated microcrystalline silicon ((p) µc-Si:H) for the silicon-based layer. The passivation properties of chemical silicon oxide (SiOx)\(p) µc-Si:H\silicon nitride (SiNx:H) stacks are studied, as well as the role of SiNx:H and aluminium oxide (AlOx) to act as diffusion barriers against hydrogen exodiffusion during the firing step. |
| Databáze: | OpenAIRE |
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