| Autor: |
S. Ferrari, Georgios Vellianitis, Karol Fröhlich, Fred Roozeboom, Athanasios Dimoulas, Kristína Hušeková, Claudia Wiemer, D. Machajdík, J.C. Hooker, Noemí Pérez, Marco Fanciulli |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
Materials Science and Engineering: B. 109:117-121 |
| ISSN: |
0921-5107 |
| Popis: |
Due to the downscaling of device dimensions in CMOS technology, the introduction of metal gate electrodes and high- k dielectrics will be necessary in order to meet future performance requirements. In particular, deposition techniques such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) have been identified as promising methods for growth of these materials. In this scope, we have analysed properties of Ru and RuO 2 gate electrodes in metal–oxide–semiconductor (MOS) gate stacks prepared on SiO 2 , atomic-layer chemical vapor deposition (ALCVD) Al 2 O 3 and MBE Y 2 O 3 dielectric films. The Ru and RuO 2 films were grown by metal–organic chemical vapor deposition (MOCVD) at 250 °C. The dielectric and metal gate electrode films were analysed by X-ray diffraction and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The resistivity of the films at room temperature were 20 and 150 μΩ cm for the Ru and RuO 2 films, respectively. Thermal stability of the films in forming gas (10% H 2 + 90% N 2 ), nitrogen and oxygen environments was investigated by applying low temperature (420 °C, 30 min) and rapid thermal (800 °C) annealing. The results indicate good thermal behavior of the Ru films but limited thermal stability of the RuO 2 films. The Ru and RuO 2 gate electrode workfunctions were extracted from high-frequency capacitance–voltage measurements on MOS capacitors. The obtained results are discussed in connection with applications of Ru and RuO 2 films as gate electrodes in CMOS technology. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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