Origin of the 745 nm photoluminescence from small diameter silicon nanowires

Autor:	Paul K. Chu, Z. Y. Zhang, S. J. Xiong, Gg G. Siu, Y. Xiong, Xl L. Wu
Rok vydání:	2008
Předmět:	Small diameter Photoluminescence Materials science Silicon Band gap Nanowire Oxide chemistry.chemical_element Nanotechnology General Chemistry Condensed Matter Physics Molecular physics Core (optical fiber) chemistry.chemical_compound chemistry Materials Chemistry Silicon nanowires
Zdroj:	Solid State Communications. 148:182-185
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2008.08.023
Popis:	a b s t r a c t A broad photoluminescence band centered at 745 nm was observed from Si nanowires (SiNWs) smaller than 4 nm in diameter with an oxide sheath. This emission band mainly originates from SiNWs grown along the (111) direction and its intensity increases with decreasing diameter and larger length. It becomes unobservable when the crystalline core of the SiNW is completely oxidized. Our theoretical calculations reveal electronic states in the band gap of the small diameter SiNWs when Si-O bands are formed and the results agree with experiments. This result provides insight into the electronic states of small-diameter SiNWs with surface oxide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e88009814f462495a2f510e0790e2769 https://doi.org/10.1016/j.ssc.2008.08.023 Zobrazit plný text záznamu Full Text from ScienceDirect