In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85
| Autor: | Xuezheng Wei, Matthew J. Kramer, J. L. Harringa, Bruce A. Cook |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Condensed matter physics business.industry Mechanical Engineering Nucleation Microstructure Crystallographic defect Crystallography Semiconductor Mechanics of Materials Transmission electron microscopy Solid mechanics General Materials Science Crystal twinning business Dimensionless quantity |
| Zdroj: | Journal of Materials Science. 42:7643-7646 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/s10853-007-1898-x |
| Popis: | (AgSbTe2)15(GeTe)85 (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4–1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 °C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 °C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed. |
| Databáze: | OpenAIRE |
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