Band alignment of III-N, ZnO and II–IV-N2 semiconductors from the electron affinity rule

Autor:	Sai Lyu, Walter R. L. Lambrecht
Rok vydání:	2019
Předmět:	Dipole Crystallography Materials science Semiconductor Acoustics and Ultrasonics business.industry Anderson's rule Heterojunction Nitride Condensed Matter Physics business Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of Physics D: Applied Physics. 53:015111
ISSN:	1361-6463 0022-3727
DOI:	10.1088/1361-6463/ab4baa
Popis:	The natural band alignment between various II-IV-N2 and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8728faa75d2585cfa6471ff5579cbd7 https://doi.org/10.1088/1361-6463/ab4baa Zobrazit plný text záznamu