LEDs on a GaN-on-Si wafer stacked with a Si-based circuit board through via holes

Autor: Selvy U. Hepriyadi, Mei-Yun Zhang, Jun-Wei Zhou, Pinghui S. Yeh
Rok vydání: 2022
Zdroj: Gallium Nitride Materials and Devices XVII.
DOI: 10.1117/12.2608660
Databáze: OpenAIRE