Geometry Dependence of Poly-Si Oxidation and its Application to Self-Align, Maskless Process for Nano-scale Vertical CMOS Structures

Autor:	Hoon Cho, Krishna C. Saraswat, Pawan Kapur, Pranav Kalavade
Rok vydání:	2006
Předmět:	Materials science CMOS Process (engineering) Nanotechnology Nanoscopic scale
Zdroj:	ECS Transactions. 3:403-414
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2356300
Popis:	Geometry dependent thermal oxidation rates of silicon/polysilicon on concave and convex surfaces are complex and need a better understanding. The complexity is a result of several competing effects, namely, volume expansion stress, area effects, stress from etch damage, and crystal orientation. In this paper we present a systematic study to decouple these effects using both experimental test structures and simulations. Among other things, the result of this work directly impacts CMOS gate stack processing on vertical MOSFETs. In addition, we use the differential oxidation rate understanding to describe a novel technique for self-aligned maskless process. We apply this to create a process for vertical CMOS structure, which is capable of self-aligning and resolving very small features without photolithography.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e866afe5b6e1299ea28ac9ceb1f592e7 https://doi.org/10.1149/1.2356300 Zobrazit plný text záznamu