Blue Laser Diodes Fabricated onm-Plane GaN Substrates

Autor:	Pablo O. Vaccaro, Yoshiyuki Takahira, Teruyoshi Takakura, Yoshinobu Kawaguchi, Shuichi Hirukawa, Yoshie Fujishiro, Masataka Ohta, Yuhzoh Tsuda, Takayuki Yuasa, Shigetoshi Ito, Yoshihiro Ueta
Rok vydání:	2008
Předmět:	Blue laser Materials science business.industry General Engineering Analytical chemistry General Physics and Astronomy Chemical vapor deposition Blueshift Electric field Optoelectronics Spontaneous emission Stimulated emission business Current density Diode
Zdroj:	Applied Physics Express. 1:011104
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.1.011104
Popis:	Blue laser diodes (LDs) were fabricated on m-plane oriented GaN substrates by atmospheric-pressure metalorganic chemical vapor deposition. Typical threshold current for stimulated emission at a wavelength λ of 463 nm was 69 mA. Blueshift of the spontaneous emission peak with increasing injection current was examined in LDs fabricated on m- and c-plane GaN substrates. Blueshifts for the m-plane LD (λ=463 nm) and the c-plane LD (λ=454 nm) with an injection current density just below threshold were about 10 and 26 nm, respectively. These results confirm that the blueshift in quantum-wells fabricated on m-plane oriented substrates is smaller than on c-plane oriented substrates due to the absence of polarization-induced electric fields.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8606d49bc2596c7e7b896fa3f718fdd https://doi.org/10.1143/apex.1.011104 Zobrazit plný text záznamu