Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
Autor: | N.H. Yang, Jeffrey M. Lauerhaas, Wesley Yu, Euing Lin, Ted Ming-Lang Guo, Don Kahaian, J.Y. Wu, J.F. Lin, Jeffery W. Butterbaugh, Chin-Cheng Chien, Anthony S. Ratkovich |
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Rok vydání: | 2014 |
Předmět: |
Materials science
fungi Metallurgy technology industry and agriculture food and beverages Sulfuric acid Chemical vapor deposition Closed chamber Condensed Matter Physics Atomic and Molecular Physics and Optics chemistry.chemical_compound chemistry Chemical engineering Silicon nitride General Materials Science Wafer Phosphoric acid Bar (unit) |
Zdroj: | Solid State Phenomena. 219:97-100 |
ISSN: | 1662-9779 |
DOI: | 10.4028/www.scientific.net/ssp.219.97 |
Popis: | A single wafer silicon nitride (SiN) selective etch process with an etch rate greater than 80A/min of low-pressure chemical vapor deposited (LPCVD) SiN has been developed. Previous work with a similar single wafer system utilized a mixture of sulfuric acid, phosphoric acid and steam to achieve a high SiN etch rate [1]. The process in this work relies on phosphoric acid and steam for a high SiN etch rate. In both of these applications, addition of steam doubles the SiN etch rate. The single wafer system utilizes a closed chamber design with integrated spray bar to uniformly dispense hot phosphoric acid and steam onto the wafer surface achieving within wafer non-uniformities of less than 3%. Rinsing and drying of the phosphoric acid from the wafer surface occurs in the same chamber (dry in/dry out) providing a stable, haze free wafer. Figure 1 contains a schematic of the phosphoric acid delivery and single wafer system. |
Databáze: | OpenAIRE |
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