ChemInform Abstract: Growth of Facet-Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure

Autor:	M. Berkenblit, T. O. Sedgwick, Paul D. Agnello, Tung-Sheng Kuan
Rok vydání:	2010
Předmět:	Facet (geometry) Silicon Atmospheric pressure business.industry Chemistry Optoelectronics chemistry.chemical_element General Medicine Epitaxy business
Zdroj:	ChemInform. 22
ISSN:	0931-7597
DOI:	10.1002/chin.199149301
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e8528326d96aed2685f07f2323e5b62a https://doi.org/10.1002/chin.199149301 Zobrazit plný text záznamu Plný text