Photoluminescence spectra of doped GaAs films
| Autor: | W. J. Lu, Guoliang Chen, YL Ji, Ying Fu, Magnus Willander |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Photoluminescence business.industry Doping Fermi level Analytical chemistry General Chemistry Spectral line Condensed Matter::Materials Science symbols.namesake Effective mass (solid-state physics) Condensed Matter::Superconductivity symbols Optoelectronics General Materials Science Thin film business Penetration depth Excitation |
| Zdroj: | Applied Physics A. 79:619-623 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-004-2560-y |
| Popis: | We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×1018 cm-3 and the film thickness is in the range of the penetration length of the PL excitation laser. |
| Databáze: | OpenAIRE |
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