Thermal conductivity of ultra low-k dielectrics
| Autor: | A. Delan, Thomas Gessner, Stefan E. Schulz, M. Rennau |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Fabrication Analytical chemistry Low-k dielectric Dielectric Condensed Matter Physics Thermal conduction Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Thermal conductivity measurement Thermal conductivity Electrical and Electronic Engineering Thin film Composite material Porosity |
| Zdroj: | Microelectronic Engineering. 70:280-284 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(03)00417-9 |
| Popis: | The so-called 3ω measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with published, commonly accepted values. The method was successfully applied to determine the thermal conductivity of porous low-k dielectric materials using special test structure fabrication. The thermal conductivity of the porous low-k dielectrics thus measured is only between 7 and 13% of the thermal conductivity of thermally grown silicon dioxide. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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