An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology
| Autor: | Bernhard Dehlink, D. Morgan, Saverio Trotta, T. Hauck, Vishal P. Trivedi, J. Dixon, A. Samulak, Sergio Pacheco, M. Wintermantel, D. Moline, Akbar Ghazinour, Hao Li, T. Aaron, Y. Yin, S. Majied, K. Shun-Meen, U. Moeller, Ralf Reuter, Jay P. John, R. Jammers |
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| Rok vydání: | 2012 |
| Předmět: |
Engineering
Radiation Chipset business.industry Electrical engineering Integrated circuit Condensed Matter Physics Noise figure Chip law.invention law Phase noise Electronic engineering Integrated circuit packaging Electrical and Electronic Engineering Transceiver business Compatible sideband transmission |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 60:778-794 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2011.2181536 |
| Popis: | We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76-77 and 77-81 GHz. The phase noise is -97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 × 13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W. The two chips are used as vehicles for a 77-GHz package test. The chips are packaged using the redistribution chip package technology. We compare on-wafer measurements with on-board results. The loss at the RF port due to the transition in the package results to be less than 1 dB at 77 GHz. The results demonstrate an excellent potential of the presented millimeter-wave package concept for millimeter-wave applications. |
| Databáze: | OpenAIRE |
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