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GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520°C to 600°C, with an activation energy of 10.4 kcal/mol. The growth rate was linearly dependent on the group III flow and has a complex dependence on the group V constituents. A room temperature photoluminescence wavelength of >1.3 μm was observed for unannealed GaAs 0.69 Sb 0.3 N 0.01 . Low temperature (4 K) photoluminescence of GaAs 0.69 Sb 0.3 N 0.01 shows an increase in FWHM of 2.4–3.4 times the FWHM of GaAs 0.7 Sb 0.3 , a red shift of 55–77 meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300 K hole mobility of 350 cm 2 /V-s with a 1.0×10 17 /cm 3 background hole concentration, and a 77 K mobility of 1220 cm 2 /V-s with a background hole concentration of 4.8×10 16 /cm 3 . The hole mass of GaAs 0.7 Sb 0.3 /GaAs heterostructures was estimated at 0.37–0.40 m o , and we estimate an electron mass of 0.2–0.3 m o for the GaAs 0.69 Sb 0.3 N 0.01 /GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field. |
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