Toward efficient perovskite solar cells by planar imprint for improved perovskite film quality and granted bifunctional barrier
| Autor: | Dengxue Li, Xiaotian Hu, Xiangchuan Meng, Xianglan Tang, Ting Hu, Lu Huang, Yiwang Chen, Zhi Xing |
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| Rok vydání: | 2021 |
| Předmět: |
Recrystallization (geology)
Materials science Passivation Renewable Energy Sustainability and the Environment Energy conversion efficiency 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Silane Grain size 0104 chemical sciences chemistry.chemical_compound chemistry Chemical engineering General Materials Science Crystallite 0210 nano-technology Bifunctional Perovskite (structure) |
| Zdroj: | Journal of Materials Chemistry A. 9:16178-16186 |
| ISSN: | 2050-7496 2050-7488 |
| DOI: | 10.1039/d1ta04520b |
| Popis: | Polycrystalline perovskite films generally have high-density defects due to the numerous crystal nuclei and randomly oriented fine grains in the film formation. These defects are commonly regarded as the source of non-radiative recombination, which seriously damages the photovoltaic performance of perovskite solar cells (PSCs). Therefore, ideal perovskite films with a suitable grain size and preferred orientation are significant for PSCs. In this paper, an effective planar imprint (PiP) method was applied to promote perovskite film recrystallization. The formation process of a superior perovskite grain was revealed by analyzing the morphology and the mechanical simulation results. Meanwhile, trimethoxy (1H,1H,2H,2H-heptadecafluorodecyl) silane (FAS) oligomers were introduced as a bifunctional barrier to passivate the defects and protect the perovskite film through the PiP process. Ultimately, the improved film quality enabled a significant improvement in power conversion efficiency (PCE) and superior stability. In comparison with the PCE of 18.35% for the pristine device, the champion PCE of the PiP treated device achieved 20.52%. In addition, there was almost no obvious degradation in the PiP treated film after 35 days of being stored in air with ≈60% humidity at 25 °C. |
| Databáze: | OpenAIRE |
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