Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs
| Autor: | Alexandre Villaret, Pierre Malinge, Sorin Cristoloveanu, Pascal Masson, Thomas Skotnicki, Philippe Candelier, R. Ranica, Francois Jacquet, Pascale Mazoyer |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Charge (physics) Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor law Modulation MOSFET Optoelectronics Electrical and Electronic Engineering Charge injection business Uninterruptible power supply Dram |
| Zdroj: | Microelectronic Engineering. 72:434-439 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2004.01.026 |
| Popis: | We report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs. First, the mechanisms of charge injection, localization and retention in the floating p-well of triple-well nMOSFETs are investigated and a new model is proposed. Then several electrical characterization set-ups are discussed. Finally, modeled and measured data are compared at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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