Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs
| Autor: | Dima Cheskis, A. Tsukernik, A. Cho, Alexander Palevski, Shimshon Bar-Ad, O. Potashnik, Serge Luryi |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Condensed matter physics Fermi level Quantum oscillations Thermionic emission Fermi energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Shubnikov–de Haas effect Electronic Optical and Magnetic Materials symbols.namesake Hall effect symbols Atomic physics Fermi gas Pseudogap |
| Zdroj: | The European Physical Journal B. 23:341-344 |
| ISSN: | 1434-6028 |
| DOI: | 10.1007/s100510170053 |
| Popis: | We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 1019 cm-3. |
| Databáze: | OpenAIRE |
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