New Method to Characterize Thin Oxide Reliability

Autor:	C. R. Helms, Heng-Chih Lin, John P. Snyder
Rok vydání:	1995
Předmět:	Materials science business.industry Process (computing) Oxide Measure (mathematics) chemistry.chemical_compound Reliability (semiconductor) chemistry Hardware_INTEGRATEDCIRCUITS Optoelectronics business Thin oxide Quantum tunnelling Degradation (telecommunications) Voltage
Zdroj:	MRS Proceedings. 386
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-386-237
Popis:	Next generation ULSI devices will require ultra thin gate insulators where degradation due to contamination or surface microroughness is an even more important problem. Tunneling and breakdown characteristics are critical electrical testing methods, but unfortunately obtaining meaningful oxide integrity information on the one hand and tunneling IV's on the other is a tedious and time consuming process.In this research, we report on a new method to measure meaningful IV's, Qbd's, and Vbd's at the same time. This method uses a linear current ramp strategy where a voltage ramp to between 8–10 MV/cm is applied first followed by a linear current ramp until breakdown is reached. There are several advantages of this new method: The linear voltage ramp quickly and easily identifies low breakdown devices, whereas switching to a linear current ramp provides for nearly constant field stressing to obtain meaningful IV and Qbd
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e81703899923025f9b600b217964adbb https://doi.org/10.1557/proc-386-237 Zobrazit plný text záznamu Full text from SpringerLink