Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4)

Autor:	L. Kubler, D. Dentel, Jean-Luc Bischoff, K. Aı̈t-Mansour
Rok vydání:	2004
Předmět:	Materials science Silicon Analytical chemistry Nucleation General Physics and Astronomy chemistry.chemical_element Crystallography Lattice constant chemistry Electron diffraction Monolayer Layer (electronics) Surface reconstruction Wetting layer
Zdroj:	Journal of Applied Physics. 95:5447-5450
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1703823
Popis:	The Si capping of small Ge dots nucleated on a C-precovered Si(001) surface has been investigated by means of reflection high-energy electron diffraction and atomic force microscopy. The growth at 500 °C of three Ge monolayers on the C-induced c(4×4) reconstruction leads to the nucleation of isolated dots, without any wetting layer. Up to a nominal thickness of 5 nm, the surface evolution during the Si cap layer deposition reveals island preservation. A mean size enhancement is even observed for these covered islands. Contrary to the Si capping situation of Ge islands on bare Si surfaces (without C seeding), where a surface smoothing is observed after few monolayers, the modified C-induced surface strain promotes a final Si adatom adsorption on the top of the Ge islands. A rough morphology is therefore maintained during the cap layer growth by this selective Si coverage. The general surface smoothing and the in-plane lattice parameter recovery toward Si bulk values are also strongly delayed.
Databáze:	OpenAIRE
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