Popis: |
In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11μm at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature. |