InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

Autor:	Carl Asplund, A. Rouvié, Shagufta Naureen, R. Marcks von Würtemberg, Rodolphe Alchaar, J. Brocal, Linda Höglund, Philippe Christol, Eric Costard, O. Saint-Pé, Jean-Baptiste Rodriguez
Rok vydání:	2019
Předmět:	Materials science business.industry Infrared Superlattice Photodetector Substrate (electronics) Photodiode law.invention Gallium antimonide chemistry.chemical_compound chemistry law Optoelectronics Quantum efficiency business Molecular beam epitaxy
Zdroj:	International Conference on Space Optics — ICSO 2018.
Popis:	In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11μm at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e81390368583b02178728712e0c095de https://doi.org/10.1117/12.2536158 Zobrazit plný text záznamu