Investigation of VO2 Thin Film Grown on III-Nitride Epitaxial Layer
| Autor: | Digangana Khan, Samee Azad, Hongmei Li, Rahul Singh, Mohiuddin Munna, Goutam Koley, Ferhat Bayram |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Wide-bandgap semiconductor Gallium nitride 02 engineering and technology Chemical vapor deposition Substrate (electronics) Nitride 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business Layer (electronics) |
| Zdroj: | 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO). |
| DOI: | 10.1109/nano47656.2020.9183713 |
| Popis: | VO 2 film was incorporated with GaN microcantilevers, and proved to be highly sensitive detector to detect acoustic waves at resonance frequency, but the VO 2 film was not of very high quality. In order to produce high quality VO 2 mesa to be used for microcantilevers, VO 2 thin films were synthesized using low pressure chemical vapor deposition technique (LPCVD) on AlGaN/GaN epitaxial layer on Si (111) substrate, and characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) to determine their material quality. Electrical and optical imaging methods were also used as characterization methods to determine the changes in properties due to the metal-insulator transition (MIT) of VO 2 . Resistance transition ratio before and after MIT transition was found to be > 1100, which indicates high quality of the material, suitable for a variety of sensing applications. Optical images taken before, during and after transition clearly indicate reflectivity changes caused by the MIT transition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|