Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C

Autor:	Adam J. Williams, Xu Chen, Karim S. Boutros, Ray Li, David F. Brown, Mary Chen, Rongming Chu, Daniel Zehnder, Scott Newell
Rok vydání:	2012
Předmět:	Materials science business.industry Transistor Normally off Threshold voltage law.invention Semiconductor law Optoelectronics Field-effect transistor Metal insulator business MISFET Leakage (electronics)
Zdroj:	2012 24th International Symposium on Power Semiconductor Devices and ICs.
DOI:	10.1109/ispsd.2012.6229067
Popis:	We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e802226e4aab7abc50499ea6e14a2826 https://doi.org/10.1109/ispsd.2012.6229067 Zobrazit plný text záznamu