A Trapezoidal Cross-Section Stacked Gate FinFET with Gate Extension for Improved Gate Control

Autor:	P. K. Chopra, Sangeeta Mangesh, K Krishan
Rok vydání:	2019
Předmět:	General Computer Science business.industry Computer science Drain-induced barrier lowering Hardware_PERFORMANCEANDRELIABILITY Electric charge Gate control Subthreshold swing Hardware_INTEGRATEDCIRCUITS Optoelectronics business Metal gate Hardware_LOGICDESIGN Leakage (electronics)
Zdroj:	International Journal of Advanced Computer Science and Applications. 10
ISSN:	2156-5570 2158-107X
Popis:	An improved trapezoidal pile gate bulk FinFET device is implemented with an extension in the gate for enhancing the performance. The novelty in the design is trapezoidal cross-section FinFET with stacked metal gate along with extension on both sides. Such improved device structure with additional process cost exhibits significant enhancement in the performance metrics specially in terms of leakage current behavior. The simulation study proves the suitability of the device for low power applications with improved on/off current ratio, subthreshold swing (SS), drain induced barrier lowering (DIBL), Gate Induced Drain Leakage (GIDL) uniform distribution of electron charge density along the channel and effects of Augur recombination within the channel.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e7eb04698ef1688bba39f519140477c2 https://doi.org/10.14569/ijacsa.2019.0100125 Zobrazit plný text záznamu