Autor: S Bosch, F Monzonis
Rok vydání: 1995
Předmět:
Zdroj: Semiconductor Science and Technology. 10:1634-1637
ISSN: 0268-1242
DOI: 10.1088/0268-1242/10/12/012
Popis: A method for the characterization of oxide-polysilicon-oxide on silicon by monochromatic ellipsometry is presented. By refining a previous work which enabled an estimation of the thickness of the top oxide from a single ( Delta , psi ) measurement, the procedures we propose here allow the simultaneous determination of two unknowns in our samples. The practical process is illustrated by several examples, using a graphical approach which follows from our inversion methods.
Databáze: OpenAIRE