HTS flux-flow channels on silicon wafers
| Autor: | P.A. Rosenthal, D.M. Potrepka, D. B. Fenner, J. I. Budnick, J. Luo, Q. Li, W.D. Hamblen |
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| Rok vydání: | 1995 |
| Předmět: |
Bromine
High-temperature superconductivity Materials science Magnetometer Transistor Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials law.invention Pulsed laser deposition chemistry law Flux flow Wafer Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Appiled Superconductivity. 5:3397-3400 |
| ISSN: | 1051-8223 |
| DOI: | 10.1109/77.403321 |
| Popis: | New process/structure designs for the channel in the vortex flux-flow transistor (VFFT) have been explored utilizing thin YBCO films on silicon wafers. Two designs are reported: first, films on micromachined Si(100) surfaces, and second, films ex-situ annealed in bromine. Shallow trenches are anisotropically etched into Si(100) wafers forming (111) facets, and films are grown by pulsed laser deposition. Bromination processing of YBCO is preceded by mild de-oxidation and followed by a re-oxidation. Broad-area characterizations by R(T), dc magnetometry, and ac susceptibility are given. On Si(100), epitaxial YBCO films have sharp R(T) transitions and high J/sub c/. Films on Si(111) and brominated films have a toe in R(T) at T/sub co/, and lower J/sub c/ more easily reduced by H. YBCO falling across the trenched surfaces or small brominated regions have R(T), I-V, and I/sub c/ promising for use as flux-flow channels in VFFT. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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