Electronic properties of hydrogen terminated n-Si (111)/electrolyte interface: Effect of saccharin addition
| Autor: | A. Chenna, A. Kadri, N. Benbrahim, L. Hamadou, S. Boudinar |
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| Rok vydání: | 2017 |
| Předmět: |
Hydrogen
020209 energy General Chemical Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology Electrolyte Penetration (firestop) 021001 nanoscience & nanotechnology Capacitance Analytical Chemistry Dielectric spectroscopy chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Electrochemistry 0210 nano-technology Saccharin Surface states Electronic properties |
| Zdroj: | Journal of Electroanalytical Chemistry. 802:118-122 |
| ISSN: | 1572-6657 |
| DOI: | 10.1016/j.jelechem.2017.08.053 |
| Popis: | In the present study, electrochemical impedance spectroscopy (EIS) has been used to determine how saccharin (SAC) affects the electronic properties of the hydrogen terminated Si(111) (n-Si(111)-H)/electrolyte interface. The presence of surface states energy levels on the n-Si(111)-H surface is well demonstrated by surface states capacitance measurements. Absorption of SAC on the n-Si(111)-H is evidenced by the changes observed in surface states distribution and density. Two monoenergetic state levels situated at nearly − 0.3 V and 0.11 V vs. SCE were found in SAC containing bath. The first surface states level have been related to the penetration of hydrogen into subsurface region, whereas the second surface states level is expected to be associated with oxidation intermediates. |
| Databáze: | OpenAIRE |
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