Switching effect on thin T1InSe films

Autor:	S. O. Guliyeva, K. D. Gyul’mamedov, Kh. S. Khalilova, E. M. Godzhaev
Rok vydání:	2011
Předmět:	Cross section (physics) Threshold current Materials science business.industry Static mode Electrical engineering Surfaces and Interfaces Current (fluid) business Engineering physics Industrial and Manufacturing Engineering Surfaces Coatings and Films
Zdroj:	Surface Engineering and Applied Electrochemistry. 47:390-393
ISSN:	1934-8002 1068-3755
DOI:	10.3103/s1068375511050085
Popis:	This article examines the current-voltage characteristic of thin TlInSe2 films in a static mode depending on the length and area of the contact. It has been found that, on thin TlInSe2 films, the effect of switching with memory is observed, and, to get stable switching, the threshold current should not exceed the current of the stabilization of the state with a nonhomogenous current distributed over the cross section.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e7c5e82f4393d344b12cbfbbcb3a0aeb https://doi.org/10.3103/s1068375511050085 Zobrazit plný text záznamu Full text from SpringerLink